ntgs3130n power mosfet 20 v, 5.6 a single n-channel, tsop-6 features ? leading edge trench technology for low on resistance ? low gate charge for fast switching ? small size (3 x 2.75 mm) tsop-6 package ? this is a pb-free device applications ? dc-dc converters ? lithium ion battery applications ? load/power switching maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain-to-source voltage v dss 20 v gate-to-source voltage v gs 8 v continuous drain current (note 1) steady state t a = 25 c i d 5.6 a t a = 85 c 4.1 t 10 s t a = 25 c 6.2 power dissipation (note 1) steady state t a = 25 c p d 1.1 w t 10 s 1.4 continuous drain current (note 2) steady state t a = 25 c i d 4.2 a t a = 85 c 3.0 power dissipation (note 2) t a = 25 c p d 0.6 w pulsed drain current t p 10 s i dm 19 a operating and storage temperature range t j , t stg -55 to 150 c source current (body diode) i s 1.0 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction-to-ambient - steady state (note 1) r ja 110 c/w junction-to-ambient - t 10 s (note 1) 90 junction-to-ambient - steady state (note 2) 200 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface-mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface-mounted on fr4 board using the minimum recommended pad size 1256 3 n-channel 4 drain gate source device package shipping ? ordering information NTGS3130NT1G tsop-6 (pb-free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 20 v 24 m @ 4.5 v r ds(on) max 5.6 a i d max v (br)dss tsop-6 case 318g style 1 marking diagram & pin assignment 1 s9 m s9 = specific device code m = date code* = pb-free package source 4 drain 6 drain 5 3 gate 1 drain 2 drain (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 32 m @ 2.5 v 4.9 a 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v; i d = 250 a 20 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j 9.8 mv/ c zero gate voltage drain current i dss v gs = 0 v; v ds = 16 v, t j = 25 c 1.0 a gate-to-source leakage current i gss v ds = 0, v gs = 8 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds, i d = 250 a 0.4 0.6 1.4 v negative temperature coefficient v gs(th) /t j 3.4 mv/ c drain-to-source on-resistance r ds(on) v gs = 4.5 v, i d = 5.6 a 19 24 m v gs = 2.5 v, i d = 4.9 a 25 32 forward transconductance g fs v ds = 10 v, i d = 5.6 a 8.2 s charges, capacitance, & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 16 v 935 pf output capacitance c oss 169 reverse transfer capacitance c rss 104 input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 10 v 965 output capacitance c oss 198 reverse transfer capacitance c rss 110 total gate charge q g(tot) v gs = 4.5 v v ds = 16 v i d = 5.6 a 13.2 20.3 nc threshold gate charge q g(th) 0.60 gate-to-source charge q gs 1.5 gate-to-drain charge q gd 4.2 total gate charge q g(tot) v gs = 4.5 v v ds = 5.0 v i d = 6.2 a 11.8 18.0 threshold gate charge q g(th) 0.6 gate-to-source charge q gs 1.4 gate-to-drain charge q gd 2.7 switching characteristics, v gs = 4.5 v (note 4) turn-on delay time t d(on) v gs = 4.5 v, v dd = 16 v, i d = 1 a, r g = 3 6.3 12.6 ns rise time t r 7.3 13.5 turn-of f delay time t d(off) 21.7 35.1 fall time t f 9.7 17.6 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.0 a t j = 25 c 0.7 1.2 v reverse recovery time t rr v gs = 0 vdc, di sd /dt = 100 a/ s, i s = 1.0 a 20.4 ns charge time t a 8.1 discharge time t b 11.6 reverse recovery charge q rr 8.8 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperature. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 ntgs3130n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
|
